| PART |
Description |
Maker |
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G27LS-75P BLF7G27L-75P |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.
Power LDMOS transistor BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| 7703403UA 7703401YA 77034042A 7703404MA 7703404NA |
Negative Adjustable Voltage Regulator
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
15 HZ, 90DB REJECTION BTW 59 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, T/R
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
Low-cost volatile, Digital Potentiometer, -40C to 125C, 8-SOIC 150mil, TUBE
PRODUCT TO FREQUENCY CONVERTER WHICH IS USED TO POWER METERING APLICATIONS, -40C to 85C, 24-SSOP 208mil, TUBE 积极可调电压稳压
18 BIT DEL-SIG A/D CONVERTER, -40C to 125C, 6-SOT-23, T/R 积极可调电压稳压
Positive Adjustable Voltage Regulator 积极可调电压稳压
ENERGY METER IC, GAIN 1:16, 500:1 DYNAMIC RANGE, -40C to 85C, 24-SSOP 208mil, T/R 积极可调电压稳压
|
International Rectifier, Corp.
TE Connectivity, Ltd.
Kingbright, Corp.
NIC Components, Corp.
|
| 100B4R7CP500X 100B100JCA500X MW4IC001NR4 CRCW12062 |
RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
飞思卡尔半导体(中国)有限公司
|
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